Silver‐ and Silver–Hydrogen‐Related Defects in Silicon
نویسندگان
چکیده
Herein, the electrical and structural properties of Ag‐ AgH‐related defects in n‐ p‐type Si are reinvestigated using conventional deep‐level transient spectroscopy (DLTS) high‐resolution Laplace DLTS. It is evidenced that a peak corresponding to substitutional Ag does not always appear as‐grown additional heat treatments necessary observe this defect. Several peaks, which were previously reported literature, observed hydrogenated Si. The these determined their origin discussed. By DLTS, depth profiles assigned S H 2 analyzed, assignments questioned.
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ژورنال
عنوان ژورنال: Physica Status Solidi A-applications and Materials Science
سال: 2021
ISSN: ['1862-6300', '1862-6319']
DOI: https://doi.org/10.1002/pssa.202100217